Перегляд за автором "Akinlami, J.O."

Сортувати за: Порядок: Результатів:

  • Complex index of refraction of indium nitride InN 
    Akinlami, J.O.; Bolaji, F.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We have investigated the complex index of refraction of Indium Nitride (InN). We obtained refractive index which has the maximum value 2.59 at the photon energy 5.30 eV, the extinction coefficient which has the maximum ...
  • Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs₄Sb₁₂) 
    Akinlami, J.O.; Awobode, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Here we report the electronic structure of praseodymium filled skutterudite compound PrOs₄Sb₁₂. The theoretical photoemission spectrum (PES) at ћω = 21.2 eV shows four distinct structures peaking at about –0.2, –7.7, –13.7 ...
  • Reflection coefficient and optical conductivity of gallium nitride GaN 
    Akinlami, J.O.; Olateju, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, ...